Item Spec Crystal structure Mono-crystalline Crystal method CZ Conductance Type P Dopant B dimension 125*125±0.4 125*125±0.4

Diameter Φ150±0.4 Φ165±0.4

Wafer thickness range 190/200±20μm 190/200±20μm

Crystal orientation <100>±1 <100>±1

Resistivity( Ω.Cm) 1-3/3-6 1-3/3-6

Lifetime( μs) ≥15 ≥15

Carbon concentration( atoms/cm3 ) ≤5*1016 ≤5*1016

Oxygen concentration( atoms/cm3 ) ≤0.95*1018 ≤0.95*1018

Etching Pit( pcs/cm3 ) ≤2000 ≤2000 TTV ≤30μm ≤30μm Camber ≤30μm ≤30μm Saw mark ≤15μm(depth) ≤15μm(depth)

Wafer surface No crack, obvious pits, surface clean, no abnormal spots no pinholes.

Gap No Edge defect Edge defect width≤0.2mm,extention≤0.5mm with total quantity≤2,,distance≥30mm

Luminance edge Length≤1/2 of wafer dimension, width≤1/3 of wafer thickness