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Specifications

"Power Star” DRT Series IGBT Drive Transformer
Model Guide
DRT series IGBT drive series transformer is our new product designed for drive IGBT and MOSFET, using New material as core material to meet more application needs.
1.Characteristics:
① Low coupling capacitances high interference immunity
② Low leakage inductances for steep control impulses;
③ No On and OFF switching delay
④ High isolating voltages for high safety standard
⑤ Fully sealed for strong mechanical endurance
⑥ Compact in size and structure, through hole easy to use
2.Ambient Conditions:
① Temporture -40℃~+85℃
② Relative humidity: 90% at 40℃
③ Atmospheric pressure 860~1060mbar(650~800mmHg)
3.Insulation Rating: Class F(155℃)
4.Safety features:
① Insulation resistance:>1000MΩ in normal condition
② Fire retardancy: In conformity with UL94-Vo
5.Parameter Definitions, diagrams of Layout/Installation/Coil, Typical Specifications:
① Parameter Definitions:
u-Tum ratio=Ⅰ:Ⅱ:Ⅲ
Vp-dielectric strength between coil windings with 60s test duration.
∫udt-Math product of volt-microsecond≈V1·tn(the value can keep unchanged in some frequency range).
V1-Input signal voltage (primary pulse voltage).
Tn-Rated pulse width of the drive transformer, under related V1 and Fp.
V2-Output signal voltage (secondary pulse voltage).
RL-IGBT module or MOSFET equivalent resistance of control section.
Lp-Inductance of primary, f=1000Hz, V=0.3V.
Ls-Leakage inductance(measured when secondary shorted) f=1000Hz, V=1V.
Ck-Coupling capacity, f=1000Hz, V=1V.

② Diagrams of Layout/Installation/Coil, Typical Specifications

Model
Ratio
u
Vp
(kV)
Primary Induction
LP
Leakage Induction
LS
Coupling Capacity
CK
∫udt
(μVS)
V1
(V)
tn
(μS)
V2
(V)
RL
(Ω)
Frequency
DRT801/201A
2:1
3.1
8mH
20μH
20pF
≥280
20
14
9
100
100Hz~50 kHz