Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3” 4”
Conduct Type S-C-N, VGF growth, EPI-Ready
Diameter 50.7+/- 0.2, 76.2+/-0.3, 100+/-0.3
Orientation (100)0+/-0.50
Thickness 350+/-25um, 625+/-25um
Primary Flat Length 16+/-1mm, 22+/-2 mm
Secondary Flat Length 8+/-1mm,16+/-2mm
CC 0.4E18-4E18 /cm3, 1E17-2.0E17
Resistivity 0.8x10-3-9x10-3, 0.05-0.005 Ohm.cm
Mobility >1000 cm2/v.s, 2000-3500 cm2/v.s
EPD 1000/cm2 , 10,000/cm2 max
Surface P/E, TTV 10um max, Particle Count <50 (>0.3µm)
Single wafer packing, carton box outside