Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3” 4”
Conduct Type SC/P, EPI-Ready
Diameter 50.8+/-0.2, 76.2+/-0.2, 100+/-0.3mm
Orientation (100) 20+/-0.50 to (110) α=450
Thickness 350+/-25um, 625+/-25um
Primary Flat Length 16+/-2, 22+/-2 mm
Secondary Flat Length 8+/-1, 16+/-2mm
C.C 2-8E18cm-3, 3-50E18cm-3
Resistivity Standard, Mobility Standard
EPD 2000/cm2, 10000/cm2 max
Surface P/E, TTV 15um max
Single wafer packing, carton box outside