Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3”
Conduct Type N, VGF growth, EPI-Ready
Diameter 50.8+/-0.2 mm, 76.2+/-0.3 mm
Thickness350+/-25µm, 625+/-25um
Orientation (100)0+/-0.50
Primary Flat Length16+/-1, 22+/-2mm
Secondary Flat length7+/-1, 12+/-2mm
Resistivity 1×107 Ohm.cm
Mobility ＞5000 cm2/v.s EPD＜10000 /cm2
TTV/BOW/Warp 10um, 15µm max
Edge 0.25 mmR, Surface P/P
Single wafer packing, carton box outside