|
Frequency Range
|
1-40MHz
|
|
Temperature stability
|
A:±1.0PPM(0~+50°C)
B:±1.5PPM(0~+70°C) C:±1.5PPM(-20~+70°C) D:±2.5PPM(-30~+75°C) E:±3.0PPM(-40~+85°C) |
|
Frequency Tolerance
|
±1.0PPM Max
|
|
Aging
|
±1.0PPM/Year Max
|
|
Output wave and Load characteristics
|
See table1
|
|
Frequency and load tolerance
|
±0.1PPM Max.vs ±10% load change
|
|
Supply voltage
|
+3.3VDC,5.0VDC
|
|
Frequency and voltage tolerance
|
±0.2PPM Max.vs ±5% voltage change
|
|
Phase Noise
|
10Hz,-70dBc/Hz
100Hz,-100dBc/Hz 1kHz,-130dBc/Hz 10kHz,-140dBc/Hz 100kHz,-145dBc/Hz |
|
Supply power
|
See table1
|
|
Storage Temperature
|
-40-+100°C
|
Table 2 Output wave and Load characteristics
|
Output
Waveform |
Output
Type Code |
Frequency Range
|
Oscillation State
|
Output Characteristics
|
|
Clipping
Sine Wave |
0
|
8MHz~40MHz
|
F:Fundamental
|
Load:10kΩ/10pf
Output level:>1Vp-p Current:Max.10mA |
|
TTL
|
1
|
1MHz~40MHz
|
F:Fundamental
|
Load:Max:10 low power consumption
TTL gates "1"level:>+2.4VDC;"0"level:<+0.2VDC Duty cycle:40/60 Rise/fall time:<6ns Current:Max.20mA |
|
HCMOS
|
2
|
1MHz~40MHz
|
F:Fundamental
|
Load:Max:10 low power consumption
TTL/HCMOS "1"level:>+4.5VDC;"0"level:<+0.5VDC Duty cycle:40/60 Rise/fall time:<6ns Current:Max.20mA |
|
ACMOS
|
3
|
1MHz~40MHz
|
F:Fundamental
|
Load:Max:10 low power consumption
TTL/ACMOS "1"level:>+4.5VDC;"0"level:<+0.5VDC Duty cycle:40/60 Rise/fall time:<6ns Current:Max.20mA |
|
Sine Wave
|
4
|
8MHz~40MHz
|
F:Fundamental
|
Load:Nominal 50Ω
Output level:>2dB Harmonic suppression:>-25dB Noise suppression>-75dB |