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Specifications

Lithography GK2
GK2 lithography is used in the LSI, sensor, surface wave component, magnetic bubble, microwave, CCD and so on.
Lithography GK2 Technical parameter:

Item
Parameter
The size
a.100X100X2-3mm; b.75X75X2—3mm; c.63X63X2—3(can choose);
Silicon size
φ35—75mm
The line
3-4μm, The thinnest can be 2μm
Mask and silicon displacement range
X/Y±2.5mm,(rotation) ±6°
Worktable rotate around the principal axis
Coarse adjustment 360° can be fine adjusted.
Worktable moving range
X,Y compose φ75mm
The? worktable’s tee surface to the moulding board
0—7.5mm
Exposal light
GCQ200W over high pressure HG light, Exposal wave length, 300―436nm
Exposal system should be above?
7mw

Exposal system uniformity of illuminance range should be in φ75mm

±5%
Microscopical lighting wave length
≈545nm
Time of exposure control range
0.1 sec—99 min
Amplification of the binocular microscope

a. Two kinds ocular:10X,16X; b. Three kind plan objective :6X,9X,15X; c.Composed magnification ratio.:60X—240X;

Vacuum contact pressure
≥0.7kgf
Dimension
1000X850X980mm(two pcs)
Weight
200kg