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Specifications

Product Name: 156*156 Poly silicon wafer
Product Model:
Product Category: Multicrystalline silicon wafers
Product Description:
 
Material Property
 
Multi156*156
   
Conductance Type
 
P Type
 
Wafer Diameter
 
219±0.4mm
Resistivity
 
0.5-2 cm
Dimensions
 
156±0.4mm
Oxygen Concentration
 
≤x10 E18Atoms/ cm 3
 
Wafer Thickness
 
190±10um
Carbon Concentration
 
≤x10 E17Atoms/ cm 3
Dopant
 
B
 
Life Time
 
≥2
Total Thickness Variety
 
≤20um
Camber
 
≤20um
Sawmark
 
≤15um
Grain Size
 
≤10pcs/c
Surface Quality
 
No crack ,no obrious,saw mark ,without obrious tactility,nopit,no V-type gap ,no hole,
No glue left, surface cleande,no abnormal spot,no stain
 
Gap
 
Width*depth of gap < 1*0.3mm2,no V-type-gap,with total quantity≤1
 
Tiny Luminance Edge
 
length≤1/2 of wafer dimension ,wide≤1/3 of wafer thickness
 
Edge defect
 
Edge  defect width≤0.4mm ,extension less than 0.8mm with total quantity≤2
distance≤30mm

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