| Length of wafer edge | 125±0.5mm 125±0.5mm 156±0.5mm |
| Diagonal | 150±0.5mm 165±0.5mm 200±0.5mm |
| Conductivity type | P-type |
| Dopant | Boron |
| Thickness | 200+20μm |
| Resistivity | 1-3Ωcm 3-6Ωcm |
| Oxygen concentration | 1X1018atoms/cm3 |
| Carbon concentration | 5X1016atoms/cm3 |
| Lifetime | 10μs |
| Chamfer discrepancy | 0.5mm |
| Vertical angle deviate | 90+0.3. |
| Orientation | 100 |
| Dislocation Density | 3000/cm2 |
| TTV | uniwafer thickness 15% 30μm |
| Warp | 50μm |
| Saw marks | 15μm |
| Cracks and pin holes | No visual cracks and V-type pin holes |
| Edge | No edge defect and silicon drop |
| Surface |
1.As clean,cut,No stains and detergent vestigital. 2.No visual knife marks,concave pit. |
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