Product Main

Specifications

High Power 50W 850nm Infrared Emitter Led

Parameter

Symbol

Value

Unit

Min

Typ

Max

Luminous Flux [1]

ФV [2]

1500

1800

2200

Mw/sr

wavelength

Wp

840

850

860

nm

Forward Voltage [4]

VF

14

15

17

V

View Angle

2Θ1/2

120

deg.

Thermal resistance [5]

RθJ-B

10.5

ºC /W

Thermal resistance [6]

RθJ-C

9.0

ºC /W

 

 

Parameter

Symbol

Value

Unit

Forward Current

IF

1800

mA

Power Dissipation

PD

50

W

Junction Temperature

Tj

TBD

ºC

Operating Temperature

Topr

-30 ~ +85

ºC

Storage  Temperature

Tstg

-40 ~ +100

ºC

ESD Sensitivity [7]

-

±20, 000V HBM

-

 

 

 

        Feature                        

•Super high power   

•Designed for high current operation

•Low thermal resistance

•SMT solderbility

•Lead Free product

•RoHS compliant

 

Applications                             

•General Torch

•Architectural lighting

•Projector light source

•Traffic signals

•Task lighting

•Decorative  / Pathway lighting

•Remote lighting

•Household appliances

• Security monitoring