(4" Sapphire Single Side Polishing wafer Specification)
Crystal Material	High Purity Al2O3(99.996%)
Specification item	Target	Tolerance		Unit
1.Surface Orientation	C-Axis(0001)
1.1 Off angle toward M-Axis	0.2°	±	0.1	degree
1.2 Off angle toward A-Axis	0°	±	0.1	degree
2.Diameter	100	±	0.1	mm
3.Thickness	650	±	25	um
4.Roughness (Ra)-Front side	≤0.3			nm
5.Roughness (Ra)-Back side	0.8～1.2			um
6.Orientation Flat	A-Axis(11-20)±0.25			degree
7.Flat Length	30	±	1	mm
8.TTV	(TROPEL)≤6			um
9.TIR(Flatness)	(TROPEL)≤5			um
10.LTV	(TROPEL)≤2(5mm*5mm)			um
11.Bow	(TROPEL)-10≤Bow≤10			um
12.Laser marked series No.	Back surface marked with clear laser number
13.Packaging	Vacuum-sealed containers with nitrogen backfill in a class 100 environment
	Sino Wafer Electronic Material Co.,Ltd.
we can also customize according to your needs,  if you have any enquiry, please feel free to inform us.