Specifications 4inch / 5inch / 6inch

IC grade Silicon Wafer

Growth Method CZ

Dopant
N type: Arsenic(As),Phosphorus(Ph),Antimony(Sb)
P type: Boron(B)
Resistivity: 0.001 ~ 1ohm-cm , 1 ~ 100 ohm-cm
Thickness: customization

Crystal orientation: <100>; <111> ;<110>;
Surface: single/double side polished no scratch, no saw mark, no chip, no stain
Packing Aluminum foil vacuum packing

Particle <10 @ 0.3um or <20 @ 0.2um
Roughness < 0.5nm
TTV < 10um, TIR < 4um, Bow < 20um, Warp < 40um, 25pc/cassette