HF RFID Label,UHF RFID Label
HF Label
Antenna Material: Aluminum
Substrate Material: PET
Antenna Thickness: 0.03mm
Substrate Thickness: 0.03mm
Frequency: 14.0+/-0.5MHz
Reading Distance: 0---10CM
Protocol: ISO14443A
Chip Type: NXP S50/S70/Ultralight/Desfire
Frequency: 13.56MHz
Write Endurance: 100,000 cycles
Data Retention: 10 years;
Baudrate: 106K bits/s
Antenna Material: Aluminum
Substrate Material: PET
Antenna Thickness: 0.03mm
Substrate Thickness: 0.03mm
Frequency: 14.0+/-0.5MHz
Reading Distance: 0---10CM
Protocol: ISO14443A
Chip Type: NXP S50/S70/Ultralight/Desfire
Frequency: 13.56MHz
Write Endurance: 100,000 cycles
Data Retention: 10 years;
Baudrate: 106K bits/s
Environmental Parameters:
Ideal Storage Temp: +15℃~+25℃, 20%RH~45%RH
Tolerant Storage Environment: -25℃~+50℃, 20%RH~90%RH
Tolerant Working Environment: -25℃~+65℃, 20%RH~90%RH
Withstand voltage: ≦5N/m㎡
Resistance to bending capacity: ≧φ20mm
UHF label:
Ideal Storage Temp: +15℃~+25℃, 20%RH~45%RH
Tolerant Storage Environment: -25℃~+50℃, 20%RH~90%RH
Tolerant Working Environment: -25℃~+65℃, 20%RH~90%RH
Withstand voltage: ≦5N/m㎡
Resistance to bending capacity: ≧φ20mm
UHF label:
Antenna Material: Copper
Substrate Material: PET
Antenna Thickness: 0.03mm
Substrate Thickness: 0.03mm
Frequency: 840~960MHz
Substrate Material: PET
Antenna Thickness: 0.03mm
Substrate Thickness: 0.03mm
Frequency: 840~960MHz
Protocol: ISO18000-6C
Chip Type: NXP-XM/XL/HSL; Alien-H2/H3; Impinj-M2/M3 …
Frequency: 915MHz
Memory: 0 bits / 96 bits /512 bits/2048 bits
Write Endurance: 10,000 cycles {HSL:100,000cycles}
Data Retention: 10 years;
Baudrate: 640K bits/s {HSL: 40K bits/s}
Chip Type: NXP-XM/XL/HSL; Alien-H2/H3; Impinj-M2/M3 …
Frequency: 915MHz
Memory: 0 bits / 96 bits /512 bits/2048 bits
Write Endurance: 10,000 cycles {HSL:100,000cycles}
Data Retention: 10 years;
Baudrate: 640K bits/s {HSL: 40K bits/s}
Environmental Parameters:
Ideal Storage Temp: +15℃~+25℃, 20%RH~45%RH
Tolerant Storage Environment: -25℃~+50℃, 20%RH~90%RH
Tolerant Working Environment: -25℃~+65℃, 20%RH~90%RH
Withstand voltage: ≦5N/m㎡
Resistance to bending capacity: ≧φ20mm
Ideal Storage Temp: +15℃~+25℃, 20%RH~45%RH
Tolerant Storage Environment: -25℃~+50℃, 20%RH~90%RH
Tolerant Working Environment: -25℃~+65℃, 20%RH~90%RH
Withstand voltage: ≦5N/m㎡
Resistance to bending capacity: ≧φ20mm

