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Specifications

 Indium ingot (In)

1, Physical character:

Atomic Weight: 114.818

Electronegative: 1.78

Density: ρ=7.31 g·cm−3 (0-100℃)

Melting Point: 156.5985 ℃

Boiling Point: 2072 ℃

2, Specification:

High Purity Indium:

In-05 Grade 99.999. The content of Indium is above 99.999%. The total content of Ag, Al, As, Cd, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm;

Uitra Purity Indium:

In-06 Grade 99.9999. The content of Indium is above 99.9999%. The total content of Cd, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm;

Uitra High Purity Indium:

In-07 Grade 99.99999. The content of Indium is above 99.99999%. The total content of Ag, Cd, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm;

3, Physical Size:

Virgulate, Ingot, Granule.

4, Application:

It is mainly used in the manufacture of III-V compound semiconductor, high purity alloy, transistor base and as a dopant of Germanium & Silicon single crystal.

5, Packing:

Vacuum packaging

1. Shape: ingot, granule
2. Purity Level: 4N-7N
3. Analysis method: ICP-MS or GDMS
4. Size: as requested
5. Vacuum packing or Nitrogen protecting ,2Kgs /Bags