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IC Grade Mono Silicon Ingot
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Size
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3"/4"/5"/6"/8''
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Growth method
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CZ
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Diameter
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76.2±0.3mm /100±0.4mm / 125±0.5mm / 150±0.5mm / 200±0.5mm
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Orientation
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<111>/<100>
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Type
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N-type/P-type
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Dopant
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P-type:Boron
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N-type:Phos./As./Sb.
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Purity
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11N(99.999999999%)
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Oxygen Content
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≤18 New PPMA
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Carborn Content
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≤1New PPMA
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Resistivity
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≥0.001Ω·cm
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Others
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No Lineage,Slip,Twinning,Cracks,or Dislocations.
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Length limits
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Accoriding to your requirement.
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MOQ
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10kgs
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Package
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Packed in wooden crate,inside with Polyethylene foam.
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Price
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According to your specification,especially resistivity.
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