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IC Grade Mono Silicon Wafer (lapped wafer)
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Size
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3"/4"/5"/6"
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Growth method
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CZ
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Diameter
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76.2±0.3mm / 100±0.4mm / 125±0.5mm / 150±0.5mm
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Orientation
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<111>/<100>
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Type
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N/P
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Dopant
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P-type:Boron
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N-type:Phos./As./Sb.
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Purity
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≥11N(99.999999999%)
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Oxygen Content
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≤18 New PPMA
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Carborn Content
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≤1 New PPMA
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Dislocation
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None
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Resistivity
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≥0.001Ω·cm
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Thickness
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≥200um, or according to your Requirement
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MOQ
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200pcs
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Package
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Packed in Polyethylene foam box,500pcs/box
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Price
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According to your specification,especially resistivity and thickness.
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