Features
Low IL, low PDL
High-speed response
Low wavelength dependence of attenuation
Excellent stability and reliability
Hermetically sealed MEMS chip
ESD safe up to 2000V
Applications:
Ø Power equalization in multi-channels optical amplified network
Ø Gain-tilt control in erbium doped fiber amplifiers(EDFAs)
Ø Dynamic Gain/Channel Equalizers(DGE/DCE) In DWDM/CWDM networks
Ø OADM power balance
Ø Photo receiver trimming
Ø Receiver protection/switch during transmitter turn-on
Specifications:
|
Parameter
|
Specification
|
|
Wavelength Range1
|
C-Band or L-Band
|
|
Attenuation Range
|
>40 dB
|
|
Attenuation Type
|
Bright or Dark
|
|
Attenuation Resolution
|
Continuous
|
|
Response Time
|
<5ms
|
|
Insertion Loss2
|
<0.7 dB
|
|
Polarization Dependent Loss@15dB
|
<0.2 dB
|
|
Polarization Mode Dispersion
|
< 0.05 ps
|
|
Return Loss
|
> 45 dB
|
|
Voltage
|
< 15 VDC
|
|
Power Consumption
|
<10 mW
|
|
Max Input Optical Power
|
500 mW
|
|
Operating Temperature
|
-5°C to +70°C
|
|
Storage Temperature
|
-40°C to +85°C
|
|
Dimensions
|
17×9mm (L×D)
|
Note:1. All parameters are for device without connectors.
2.Special specifications can be customized according to customer requirements.
3.1310nm, 1060nm also available.