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Item
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Solar grade mono silicon wafer (156x156mm)
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Growth Method
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CZ
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Conductive Type
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P
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Dopant
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Boron
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Orientation
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<100>±3°
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Resistivity
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1 –3,3-6 Ω?cm
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Bulk Lifetime
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≥10μs
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Oxygen Content
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≤1.8*1018 /cm3
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Carbon Content
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≤5.0*1016 /cm3
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Dimension
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156*156±0.5mm
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Diagonal
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200±0.5mm
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Square Sides Angle
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90±0.3°
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Straight Sections Length Deviation
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21.81±1.0mm
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Thickness
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200±20um(thinnest≥180um)
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TTV
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≤30um
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Saw Mark
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≤15um
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Warp
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≤40um
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Chips
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Depth<0.3mm;Length<0.5mm
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less than 2pcs per wafer
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Appearance
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No Stain, No Pinhole and Cracks by Visual Inspection
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Dislocation Density
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≤1000 pcs/cm2
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MOQ
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1000pcs
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Package
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Packed in Polyethylene foam box,400pcs/box
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