512Mbit (64Mx8Bit)NAND FLASH
FEATURES SUMMARY
* Power Supply
-3.3V Device(AFND1208U1) 2.7V ~ 3.6V
-Random Access : 15us(Max.)
-Serial Page Access : 30ns(Min.)
* Power Supply
-1.8V Device(AFND5608S1) 1.7V ~ 1.95V
-Random Access : 15us(Max.)
-Serial Page Access : 50ns(Min.)
* Organization
-Memory Cell Array : (64M + 2M) x 8bits
-Data Register : (512 + 16) x 8bits
* Automatic Program and Erase
-Page Program : (512 + 16) x 8bits
-Block Erase : (16K +512)Bytes = 32pages
* Page Read Operation
-Page Size : (512 + 16)Bytes
-Random Access : 15us(Max.)
-Serial Page Access : 30ns(Min.)
* Fast Write Cycle Time
-Program time : 200us(Typ.)
-Block Erase time : 2ms(Typ.)
* Copy-Back PROGRAM Operation
-Fast Page copy without external buffering
* Command Register Operation
* Security features
-OTP area, 16Kbytes(32 pages)
* Hardware Data Protection
-Program / Erase locked during Power transitions
* Data Integrity
-Endurance : 100K Program / Erase Cycles
(With 1bit/528byte ECC)
-Data Retention : 10 years
* Package
-AFND1208U1 : Pb-Free Package
48-pin TSOP(12 x 20 / 0.5 mm pitch)
48-Ball FBGA: 9.0 x 9.0 x 1.0mm

Pin to pin with K9F1208U0M/A/B/C,K9F1208Q0C,K9K1216U0C,K9K1216Q0C