1Gb

Power Supply
-3.3V Device(AFND1G08U3) 2.7V ~ 3.6V
* Organization
-Memory Cell Array : (128M + 4M) x 8bits
-Data Register : (2048 + 64) x 8bits
* Automatic Program and Erase
-Page Program : (2048 + 64) x 8bits
-Block Erase : (128K +4K) x 8bit =64pages
* Page Read Operation
-Page Size : (2048 + 64) x 8bits
-Random Access : 25us(Max.)
-Serial Page Access : 25ns(Min.)
*Fast Write Cycle Time
-Program time : 200us(Typ.)
-Block Erase time : 2ms(Typ.)? Copy-Back PROGRAM Operation
- Fast Page copy without external buffering
* Status Register
- Normal Status Register
(Read/Program/Erase)
* Security features
-OTP area, 16Kbytes(8 pages)
* Hardware Data Protection
-Program / Erase locked during Power transitions
* Data Integrity
-Endurance : 100K Program / Erase Cycles
(With 1bit/528byte ECC)
-Data Retention : 10 years
* Package
-AFND1G08U3 : Pb-Free Package
48-pin TSOP(12 x 20 / 0.5 mm pitch)
48-Ball FBGA: 9.0 x 9.0 x 1.0mm
48-Ball FBGA: 6.5 x 8.0 x 1.0mm