MHL21336, The RF Line 3G Band

RF Linear LDMOS Amplifier

Designed for ultra–linear amplifier applications in 50 ohm systems operating in

the 3G frequency band. A silicon FET Class A design provides outstanding

linearity and gain. In addition, the excellent group delay and phase linearity

characteristics are ideal for digital CDMA modulation systems.

? Third Order Intercept: 45 dBm Typ

? Power Gain: 31 dB Typ (@ f = 2140 MHz)

? Excellent Phase Linearity and Group Delay Characteristics

? Ideal for Feedforward Base Station Applications