IC Grade Mono Silicon Wafer (single side polished )

Size:3"/4"/5"/6"

Growth method:CZ

Grade:Prime grade

Diameter:76.2±0.3mm/100±0.4mm / 125±0.5mm / 150±0.5mm

Orientation:<111>/<100>

Type: N-type/P-type

Dopant P-type: Boron

N-type: Phos. /As. /Sb.

Purity 11N(99.999999999%)

Oxygen Content:≤18 New PPMA

Carborn Content:≤ 1 New PPMA

Resistivity:≥ 0.001Ω -cm

Thickness:≥ 200um, or according to your requirement

Others:TTV≤10um, Bow≤35um, Warp≤35um

Particles:≥0.3um@≤10PPW

Surface Frond side polished, back side etched.

MOQ:50PCS

Package Packed in cassette, and sealed in vacuum bag, 25PCS/cassette.

Price According to your specification, especially resistivity and thickness