IC Grade Mono Silicon Wafer
Size: 4"/5"/6"

Growth method :CZ

Grade: Prime grade

Diameter: 100± 0.4mm / 125± 0.5mm / 150± 0.5mm

Orientation: < 111> /< 100>

Type :N-type/P-type

Dopant: P-type: Boron

               N-type: Phos. /As. /Sb.

Purity :11N(99.999999999%)

Oxygen Content: ≤ 18 New PPMA

Carborn Content: ≤ 1 New PPMA

Resistivity: ≥ 0.001Ω @cm

Thickness: ≥ 200um, or according to your requirement

Others :TTV≤ 10um, Bow≤ 35um, Warp≤ 35um

Particles :≥ 0.3um@≤ 10PPW

MOQ :50PCS

Package Packed in cassette, and sealed in vacuum bag, 25PCS/cassette.

Price According to your specification, especially resistivity and thickness