Large diameter silicon ingot

Size 12"-16"

Growth method: CZ

Diameter :300-406mm

Orientation :< 100>

Type: N-type / P-type

Dopant :P-type: Boron

               N-type: Phos.

Purity :11N(99.999999999%)

Oxygen Content :≤ 18 New PPMA

Carborn Content :≤ 1 New PPMA

Resistivity: ≥ 0.001Ω . Cm

Others :No Lineage, Slip, Twinning, Cracks, or Dislocations.

Package Packed in wooden crate, with Polyethylene foam inside.

Price According to your specification.