Semi Grade Mono Silicon Wafer (lapped wafer)

Size: 3"/4"/5"

Growth method: CZ

Diameter: 76.2± 0.3mm / 100± 0.4mm / 125± 0.5mm

Orientation :< 111> /< 100>

Type: N/P

Dopant :P-type: Boron

               N-type: Phos. /As. /Sb.

Purity :≥ 11N(99.999999999%)

Oxygen Content: ≤ 18 New PPMA

Carborn Content: ≤ 1 New PPMA

Dislocation None

Resistivity :≥ 0.001Ω @cm

Thickness :≥ 200um, or according to your Requirement

MOQ: 500PCS

Package Packed in Polyethylene foam box, 500PCS/box

Price According to your specification, especially resistivity and thickness.