Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GaN for LED's 
Crystal materials: 99, 996% of Al2O3, High Purity, Monocrystalline 
Crystal quality: Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent 
Diameter: 2inch- 6inch 
Thickness: 230 ±15 μ M, 330±15 μ M, 430±15 μ M, 500±15 μ M 650±15 μ M, 
Orientation: C-plane, M-plane, A-plane, R-plane, C-plane off M-plane, C-plane off A-plane 

Primary flat Orientation: A-plane (1 1-2 0) ± 0.2° 
Primary flat length: 16.0/22.0/32.5±1.0 mm, 

TTV ≤ 15 μ M, 
LTV ≤ 15 μ M, 
TIR ≤ 15 μ M, 
BOW ≤ 15 μ M, 
Warp≤ 15 μ M, 

Front Surface: Epi-polished, Ra< 0.2nm (By AFM). 
Back Surface: Fine ground (Ra=0.5 to 1.2 μ M) or Epi-polished (Ra< 0.2 nm) 
Cleaning/packaging: Class 100 clean room cleaning, vacuum packaging; 25 pieces in one cassette packaging or individual packaging. 
Note: The sapphire substrate can be provided according to your specific requirements. 

Waiting for your inquiry for more information.