| Place of Origin: | China (Mainland) |
|---|---|
| Brand Name: | Toshiba |
| Model Number: | 1N4007 |
| Type: | |
| Application: | |
| Package Type: | Throught Hole |
| Peak Repetitive Reverse Voltage: | 5uA |
| Peak Non-Repetitive Reverse Voltage: | |
| Mean On-State Current: | |
| Dimensions: |
Quick Details
Specifications
Rectifier diode
High forward surge capability: 30A
Maximum average forward rectified current: 1.0A
Limit parameter VRM ≥ 50V
Maximum reverse voltage: 1000V
Low reverse leakage current: 5uA (max)
Forward voltage drop: 1.0V
Maximum peak reverse current: 30uA
Typical thermal resistance: 65 ℃ / W
Typical junction capacitance: 15pF [1]
Working temperature: -50 ℃ ~ +150 ℃
Package: DO-41
3A there is the 1N5822 diode, a Schottky diode is a common back pressure 40VRL207 2A rectifier diode backpressure 1000V.
High forward surge capability: 30A
Maximum average forward rectified current: 1.0A
Limit parameter VRM ≥ 50V
Maximum reverse voltage: 1000V
Low reverse leakage current: 5uA (max)
Forward voltage drop: 1.0V
Maximum peak reverse current: 30uA
Typical thermal resistance: 65 ℃ / W
Typical junction capacitance: 15pF [1]
Working temperature: -50 ℃ ~ +150 ℃
Package: DO-41
3A there is the 1N5822 diode, a Schottky diode is a common back pressure 40VRL207 2A rectifier diode backpressure 1000V.