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Quick Details

Operating Temperature: -55---+155
Temperature Coefficient: 100PPM
Rated Power: 1/4W---5W.1/2WS-5WS
Resistance Tolerance: 1% 5%
Resistance: 0.1R-1KR and above or below
Package Type: T/B; P
Technology: Non Wire MF resistor
Type: metal film resistor
Model Number: XW-133
Brand Name: OEM
Place of Origin: China (Mainland)

Specifications


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Cheap Price Non-Wire Metal Film MELF Resistors
Comparable Price Metal Film Resistor
electronic component to protective circuit SGS RoHS

 1,Style is your market

 Used for power industry to protective circuit.

 

2,Selling point

 1)Prompt delivery;

 2)Variety of packing:bulk or tape in box;

 3)Stable performance, extensive resistance, small size,high operating temperature and high ultimate voltage;

 4)Factory direct price.

 

3,Description

 

1)High quality;

2)Meet performance requirement of CNS 2320, JIS 6402;

3)Standard tolerance : 5%.( 1% Available );

 4)Ceramic core. (High conductivity);

 5)Metal film. (High stability);

 6)End cap (High reliability fitting by original cap-pressing method);

 7)Epoxy resin (Insulative lacquer, solvent-proof);

 8)Color code (Per MIL & EIA standards);

 9)Lead wire (Excellent solderability);

 10)OEM;

 11)The normal size coating is yellow and the small size coating is pink.  

 

4,Function

 To protective circuit.

 5,Advantage

 1)Factory direct price;

 2)All materials & machines imported from Taiwan;

 3)Rohs compliant & ISO9001(2008);

 4)Prompt delivery.

  

TYPE

DIMENSION(mm)

MAX.

WORKING VOLTAGE(V)

MAX.

OVERLOAD VOLTAGE(V)

INSULATION RESISTANCE TO VOLTAGE(V)

RESISTANCE TOLERANCE

RESISTANCE RANGE(OHM)

L

±1

D

±1

H

±1

d ±0.05

MIN.

MAX.

MF

1/8W,1/4WS

3.5

1.7

28

0.43

150

300

300

F(±1%)

10MΩ

MF

1/4W,1/2WS

6.5

2.3

26

0.5

250

500

500

F(±1%)

10MΩ

MF

1/2W,  1WS

9.5

3.2

25

0.56

350

700

700

F(±1%)

10MΩ

MF

1W,  2WS

12

4.5

31

0.75

500

800

1000

F(±1%)

0.1Ω

1MΩ

MF

2W,  3WS

16

5

33

0.75

500

1000

1000

F(±1%)

0.1Ω

1MΩ

MF

3W,  5WS

18

6

33

0.75

500

1000

1000

F(±1%)

0.1Ω

1MΩ

 

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