Feature:	Performance and Quality Industry-Leading Efficiency on P-type Monocrystalline and Multicrystalline Silicon Solar cell Robust Reliability Performance for Potential Mudule Benefit Beyond 25 years Compatible with Present Module Manufactureing Process PID Resistant Confirmed by All Major Customers and testing Labs 100% In-line Optical and Electrical Inspection
Physical  Characteristics	Dimension	156mm*156mm+/-0.5mm
	Wafer Thickness	200um+/-30um
	Front(-)	Three 1.5mm wide bus bars(silver)with distance 52mm, alkaline texturized sureface with dark blue  silicon nitride AR coating.
	Back(+)	2.5mm wide silver/aluminum soldering pads, aluminum local back surface field.
Electrical Characteristics	Efficiency Class	1840	1860	1880	1900	1920	1940	1960	1980
	Efficiency(%)	18.4	18.6	18.8	19	19.2	19.4	19.6	19.8
	Pmax      (w)	4.41	4.46	4.51	4.56	4.61	4.66	4.71	4.76
	Voc       (V)	0.628	0.63	0.632	0.634	0.636	0.637	0.639	0.641
	Isc       (A)	9.03	9.06	9.09	9.12	9.15	9.18	9.21	9.24
	Vmax      (V)	0.526	0.528	0.531	0.533	0.535	0.537	0.539	0.541
	Imax      (A)	8.39	8.45	8.51	8.57	8.62	8.68	8.74	8.79
Temperature Coefficients	Voltage	-2.08	mV/K
	Current	4.51	mA/K
	Power	-0.4	%/K