Indium (In) 

1,Pure:99.995% - 99.9999%;

2,Technic:Electrolysis-Vacuum Smelting: removal of low melting point Impurities.(Sn,S,Se,Pb,CD,as,Hg,P );

3,Analysis :ICP-MS or GDMS (5N:All impurity elements is below 10ppm)

4,Size:; Ingot;Granule,Powder 

5,Service :Supply MSDS,Free sample; Provide Solutions for Material Application.

6, Physical Character: 

Atomic Weight: 114.818

Electronegative: 1.78

Density: =7.31 g/cm³(0-100)

Melting Point: 156.5985 

Boiling Point: 2072 

7, Specification: 

High Purity Indium: 

in-04 Grade 99.995. the content of Indium is above 99.995%. the total content of Ag, Al, as, CD, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 50 ppm; 

in-05 Grade 99.999. the content of Indium is above 99.999%. the total content of Ag, Al, as, CD, Cu, Fe, Mg, Ni, Pb, S, Si, Sn, Tl, & Zn is bellow 10 ppm; 

Ultra Purity Indium:

in-06 Grade 99.9999. the content of Indium is above 99.9999%. the total content of CD, Cu, Fe, Mg, Pb, S, Si & Sn is bellow 1 ppm; 

Ultra High Purity Indium:

in-07 Grade 99.99999. the content of Indium is above 99.99999%. the total content of Ag, CD, Cu, Fe, Mg, Ni, Pb & Zn is bellow 0.1 ppm; 

8, Physical Size: 

Bar, Ingot, Granule.

9, Usage: 

It is mainly Used in the manufacture of III-V compound semiconductor, high purity alloy, Transistor base and as a dopant of Germanium & Silicon single crystal.

10, packing: 

It is packed with Dacron film, then covered with a sealed plastic film bag or vacuum sealed in a glass ampule