the following example is for you reference.


1.Brief Introduction:

Applicable workpieces: Silicon carbide wafers

 Process workflow: Laser cutting  Wafer breaking  Wafer expansion

  

 

2.Techincal parameters:

 Laser type: Infrared picosecond laser

 Laser power: 4W

 Cooling method: Air cooling

 X-axis: 450mm travel length, 0.1m resolution

 Y-axis: 700mm travel length, 0.1m resolution

 Z-axis: 20mm travel length, 0.1m resolution

 -axis: 120 travel angle, resolution 0.001

 Maximum cutting thickness: 1mm

 Maximum cutting speed: 500mm/s

 Applicable wafer sizes: 6 inches (Can be outfitted to process 8-inch wafers)

 Processing method: Front-side/backside cutting

 Cutting line width: <5m

 Positional accuracy: 10m between parallel lines

 Dicing street width: 20m (backside cutting); half the thickness of the material (front-side cutting)

 Processing method: Automatic single-axis processing via front-side or backside cutting

 Focusing mode: Auto-focusing

 Lighting system: Infrared source

 Real-time laser power monitoring during dicing

 Granite base

 Built-in safety protection features

 Operating system and software: Windows XP with all-Chinese control software

 Electronic pressure display

  

 

3.Performance features:

 Fast cutting speeds; high-quality results; high yield rates.

 Complete process solution available (including wafer breaking and expansion equipment)

 Mature processing technology; applicable to various types of silicon carbide wafers.