| Brand Name: | Homray Material |
|---|---|
| Product Series: | 2inch |
| Semiconductor Type: | compund semiconductor |
| Manufacturing Technology: | compund semiconductor |
| Diameter: | 2inch |
| Place of Origin: | China (Mainland) |
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GaN Epitaxial Wafer for HEMT GaN on sapphire Manufacturer
GaN epitaxial wafer technology is the core technology of GaN chip production, GaN high-power semiconductor,high RF semi -conductor as a large number of power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries.
Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate.
RF applications such as power amplifier
Vehicle power devices
Power electronics such as power supplies, DC/DC converter, etc.
Environment resistant devices

