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Brand Name: Homray Material
Product Series: 2inch
Semiconductor Type: compund semiconductor
Manufacturing Technology: compund semiconductor
Diameter: 2inch
Place of Origin: China (Mainland)

Specifications

GaN Epitaxial Wafer for HEMT GaN on sapphire Manufacturer

GaN epitaxial wafer technology is the core technology of GaN chip production, GaN high-power semiconductor,high RF semi -conductor as a large number of power control systems and communications for high-speed rail, electric vehicles, 5G communications, radar, robotics and other industries.

 

Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. 


 RF applications such as power amplifier

 Vehicle power devices

 Power electronics such as power supplies, DC/DC converter, etc.

 Environment resistant devices
GaN Epitaxial Wafer for HEMT GaN on sapphire Manufacturer