SiC Substrate Wafer Manufacturer 4H-SI type 4inch

 Homray Material TechnologyOffers semiconductor silicon carbide wafers,6H-SiC and 4H-SiC in different quality grades for researcher and industry manufacturers. We has  developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company,we are devoted to continuously improve the quality of currently substates and develop large size substrates.

Specification

Place of Origin: China (Mainland)

Brand Name: Homray Material Technology

Grade:Production Grade/Research Grade/Dummy Grade

Type:4H-N  4H-SI

Size:2/3/4/6

Application: semiconductor