Replacing Infineon IGBT Module EconoDUAL3 supplier

Homray Semiconductor Technology medium power IGBT modules are designed for 600V/650V, 1200V and 1700V withRated current range 10A - 600A. An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor.An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package. the dies are normally connected in a selected electrical configuration such as half-bridge, 3-level, dual, chopper, booster, etc. IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.