4 inch Sapphire GaN Substrate Wafer Si doped

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. the compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.

HomrayMateria's key advantage is our wealth of materials growth experience in GaN single crystal growth, owning essential patents in GaN substrates growth technologies.HomrayMaterial offers standard and customized free-standing GaN substrates with extra low dislocation densities and thick AlN/Sapphire templates, which are suitable for applications in high-power LED, blue LD, high power and high frequency devices and UV LED.