SiC Wafer Manufacture from china Factory

Homray Material Technology provide high quality silicon carbide SiC wafer to electronic and optoelectronic industry. Silicon carbide SiC wafer is a next generation semiconductor material, with unique electrical propertiesand excellent thermal properties, compared to silicon wafer and gallium arsenide wafer, silicon carbide wafer is more suitable for high temperature and high power device. Silicon carbide substrate wafer can be supplied in diameter 2 inch,3 inch,4inch,6inch, both 4-H-N and 4H-Si.

Compared to conventional Si-devices SiC-based electronics offers:

 

Faster switching speed

Higher voltages

Lower parasitic resistances

Smaller size

Less cooling required due to high-temperature capability