China SiC ingots Manufacturer SiC wafer Supplier

100mm (4 inch) SiC ingots and SiC wafer 4H in stock. High-quality, low defect density epitaxial wafers & ingots for high-power devices. Purchase 6 inch SiC ingots  from HMT company at factory price. Contact us now!

SiC material long crystal efficiency is 100 to 200 times slower than Si, Si long crystal about 3 days to make 200 cm high crystal rod, SiC to 7 days to grow 2 to 5 cm crystal ball.  in addition, SiC hard and brittle, cutting, grinding and polishing difficulty is high, there will be a lot of waste.  At the same time, the temperature and pressure are not allowed to make any mistakes in the crystal growth process. The crystal growth process is operated in a completely black box environment, during which the crystal changes cannot be observed by naked eyes, and the crystal growth rate is extremely slow