| Brand Name: | HMT |
|---|---|
| Product Series: | sic ingots |
| Semiconductor Type: | compound |
| Manufacturing Technology: | HMT |
| Diameter: | 6 inch |
| Place of Origin: | China (Mainland) |
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Specifications
6 inch SiC ingots Manufacturer semi insulating SiC ingots price China Factory
A reliable manufacturer you can trust! SiC ingots. HMT as the leading manufacture of SiC ingot and SiC substrate, we offer best price of 6 inch conductive N type SiC crystals.
Conductive silicon carbide substrate: refers to the resistivity of silicon carbide substrate in 15~30mωCm. Silicon carbide epitaxial wafers grown from conductive silicon carbide substrates can be further made into power devices. Power devices are the core components of power electronics conversion devices, which are widely used in new energy vehicles, photovoltaic, smart power grids, rail transit and other fields. Automotive electrification trend is favorable for SiC development.

