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Package Type: Throught Hole
Type: Bipolar Junction Transistor
Brand Name: On Semiconductor
well(at)hknovatech.com.cn: well@hknovatech.com.cn
application: RF amplifiers

Specifications

ON Semiconductor BD139 Transistors
Features:

 

  • Plastic casing NPN Transistor

  • Continuous Collector current (IC) is 1.5A

  • Collector-Emitter voltage (VCE) is 80 V

  • Collector-Base voltage (VCB) is 80V

  • Base Current (Ib) is 0.5A

  • Emitter Base Breakdown Voltage (VBE) is 5V

  • DC current gain (hfe) is 40 to 160

  • Available in to-225 package


 

Technical details:

  • RF Amplifiers

  • Switching circuits

  • Amplification circuits

  • Audio amplifiers

  • Load driver circuits


Package:
to-225AA, to-126-3