| Package Type: | Throught Hole |
|---|---|
| Type: | Bipolar Junction Transistor |
| Brand Name: | On Semiconductor |
| well(at)hknovatech.com.cn: | well@hknovatech.com.cn |
| application: | RF amplifiers |
Quick Details
Specifications
Features:
Plastic casing NPN Transistor
Continuous Collector current (IC) is 1.5A
Collector-Emitter voltage (VCE) is 80 V
Collector-Base voltage (VCB) is 80V
Base Current (Ib) is 0.5A
Emitter Base Breakdown Voltage (VBE) is 5V
DC current gain (hfe) is 40 to 160
Available in to-225 package
Technical details:
RF Amplifiers
Switching circuits
Amplification circuits
Audio amplifiers
Load driver circuits
Package:
to-225AA, to-126-3

