| Brand Name: | Spark |
|---|---|
| Refractoriness (Degree): | Common (1580°< Refractoriness< 1770°) |
| Al2O3 Content (%): | 1 |
| Material: | Silicon Carbide (SiC) |
| Shape: | Pipe |
| Place of Origin: | China (Mainland) |
Quick Details
Specifications
Silicon Carbide Heating Element General Description
Silicon carbide heating element is a kind of non-metal high temperature electric heating element. It is made of selected high quality green silicon carbide as main material, which is made into blank, siliconization under high temperature and recrystallized. It is the most popular type of economical heating element capable of operating under hot and rigorous environments.
Silicon Carbide Heating Element Features
1. Withstands as high as 1600°C
2. High strength and excellent shock resistance
3. Heat source is free of noise and air pollution
4. Anti-oxidization, anti- corrosion
5. Easy to installation and maintenance
Applications of Silicon Carbide Heating Element
There are ED, U, W, H, Gun, Single Spiral, Double Spirals, Dumbbel, Door-like types and etc. Which are widely used in various high temperature electric furnaces in air, vacuum and other protection gas environments and other electric heating devices, such as industries of magnet, ceramics, powder metallurgy, glass and machinery, etc.
Normally the following should be given when describing any type of SiC heating elements:
- Type: ED, U, W, SC, SCR, DB,G, H, or DM
- Outside Diameter (OD): mm
- Length of Hot Zone (HZ):mm
- Length of Cold Zone (CZ):mm
- Length of Overall(OL):mm
- Center Distance (A):mm
- Resistance (at 1050℃+/-50℃):Ω
Physical property of SIC heating element
| Specific gravity | 2.6~2.8g/cm3 | Bend strength | >300kg |
| Hardness | >9MOH'S | Tensile strength | >150kg/cm3 |
| Porosity rate | <30% | Radiance | 0.85 |
Recommended surface load and Influences to Surfaces of the Elements in Different Operating TemperatureS
| Atmosphere | Furnace Temperature(°C) | Surface Load(W/cm2) | the influence on the Rod |
| Ammonia | 1290 | 3.8 | the action on SiC produces methane and destroys the protection film of SiO2 |
| Carbon dioxide | 1450 | 3.1 | Corrode SiC |
| Carbon monoxide | 1370 | 3.8 | Absorb carbon powder and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destroy the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | the action on SiC produces methane and destroys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | the action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| Silicon dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC oxidized |
| Water-vapor | 1090-1370 | 3.1-3.6 | the action on SiC produces hydrate of silicon |
| Hydrocarbon | 1370 | 3.1 | Absorb carbon powder resulted in Hot pollution |