| Brand Name: | HMT |
|---|---|
| Product Series: | 6 INCH |
| Semiconductor Type: | COMPOUND |
| Manufacturing Technology: | other |
| Diameter: | 150mm |
| Place of Origin: | China (Mainland) |
Quick Details
Specifications
Grinding Wheel SiC Boule Manufacturer Testing
Do you want testing diamond grinding wheel? Contact HMT company which foucs on producing SiC boule including 4 inch 6 inch and 8inch. both conductive N type and semi-insulating SI type are available in HMT. Domestic and foreign customers purchase SiC Boule for grinding wheel, laser slicing, cold split machine testing.
the requirements of the SiC device for the lining plate include: the surface thickness change is less than 1um, the surface roughness (Ra) of the Si surface is 0.3nm, and the surface of the C surface is 0.5nm, and the surface should ensure low processing damage and residual stress. after cutting and stripping (mortar line method), the SiC substrate usually has a damaged layer of 150-250um, its surface roughness and flatness are poor, and there are many marks left by wire cutting, so it is necessary to use the flattening process to process the SiC substrate surface, and finally get a smooth polished sheet for the use of the posterior epitaxy process.
Do you want testing diamond grinding wheel? Contact HMT company which foucs on producing SiC boule including 4 inch 6 inch and 8inch. both conductive N type and semi-insulating SI type are available in HMT. Domestic and foreign customers purchase SiC Boule for grinding wheel, laser slicing, cold split machine testing.
the requirements of the SiC device for the lining plate include: the surface thickness change is less than 1um, the surface roughness (Ra) of the Si surface is 0.3nm, and the surface of the C surface is 0.5nm, and the surface should ensure low processing damage and residual stress. after cutting and stripping (mortar line method), the SiC substrate usually has a damaged layer of 150-250um, its surface roughness and flatness are poor, and there are many marks left by wire cutting, so it is necessary to use the flattening process to process the SiC substrate surface, and finally get a smooth polished sheet for the use of the posterior epitaxy process.

