Growth Method: CZ Conductive Type: P Dopant: B Orientation: <100> Resistivity: 0.5-2Ωcm 3-6Ωcm Minority Carrier Lifetime: >10μs Oxygen content: ≤1.0*10^18 at/cm3 Carton content: ≤5.0*10^16 at/cm3 Dislocation Density: ≤100/cm^2 Nomol Ingot Lenth: 470mm Apperance: No crack, no contamination and no other crystal defects naked eye Dimeter(Φ) 4 "≥138mm 　6 "≥153mm　8 "≥206mm Off Orientation: ＜?3?Min. Ingot Lenth: ≥100mm